Method for producing laser diodes with an adjusted and integrate

Metal working – Plural diverse manufacturing apparatus including means for... – Common reciprocating support for spaced tools

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

29580, 29583, 29591, 148 15, 372 36, H01L 21302, H01L 21461, B01J 1700

Patent

active

046727361

ABSTRACT:
For adjustment of heat sinks to be applied to a wafer being used to form a plurality of semiconductor diodes, a mask is applied to the wafer. Openings of the mask are offset in rows relative to one another for the electrolytic deposition of the material of the heat sinks such that optimum exploitation of the wafer surface is achieved. Sufficient space remains for placement of scoring lines on the wafer surface to facilitate breaking of the wafer first into individual ingots, and then into separate laser diodes. End faces of the heat sinks are arranged close to minor faces of the diodes by appropriate placement of the scoring lines.

REFERENCES:
patent: 4073055 (1978-02-01), Kimura et al.
patent: 4197631 (1980-04-01), Meyer et al.
patent: 4224734 (1980-09-01), Tiefert et al.
patent: 4236296 (1980-12-01), Woolhouse
patent: 4259682 (1981-03-01), Gamo
patent: 4306351 (1981-12-01), Ohsaka et al.
patent: 4525924 (1985-07-01), Schafer
patent: 4542512 (1985-09-01), Van Den Beemt
patent: 4546478 (1985-10-01), Shimizu et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method for producing laser diodes with an adjusted and integrate does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for producing laser diodes with an adjusted and integrate, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for producing laser diodes with an adjusted and integrate will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-675911

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.