Method for producing large-area power semiconductor components

Details Method for producing large-area power semiconductor components Method for producing large-area power semiconductor components

1987-09-11

1989-02-21

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 17, 437 24, 437142, H01L 21423, H01L 21425, H01L 21428, H01L 2974

Patent

active

048064971

ABSTRACT:
A method for producing large-area power semiconductor components, wherein at least two irradiation processes (neutron irridiation, ion implantation electron, .gamma.or proton irradiation) are used to produce the basic doping, to introduce deep pn junctions and to introduce recombination centers. It is precisely for the critical process steps (p-base, n-type stop layer) that the improved homogeneity of the layers signifies a higher yield and improved limit data for the finished components.

REFERENCES:
patent: 4170502 (1979-10-01), Watakabe
Electronics & Power, May 1982, Institution of Electrical Engineers (Hitchin Herts, GB), F. J. Burgum: "The GTO-A New Power Switch", pp. 389-392, see page 389.
ELEKTROTECHNIK, vol. 59, No 23, Dec. 1977, Vogel-Verlag KG, (Wurzburg, DE), K. H. Ginsbach: "Thyristoren in rascher Entwicklung", pp. 24-26, see pp. 24-25.
ELECTRONIQUE ET MICROELETRONIQUE INDUSTRIELLES, vol. 225, Oct. '76 Societe des Editions Radio, (Paris, FR), H. Lilen: "Les nouvelles generations de composants de puissance dependront des technologies de bombardement neutronique et/ou electronique", pp. 22-25.
IEEE Transactions on Electron Devices, vol. Ed. 23, No. 8, Aug. 1976; "Phosphorus Doping of Silicon by Means of Neutron Irradiation", Ernst W. Haas and Manfred S. Schnoller.
"Influence of Carbon Concentration on Gold Diffusion in Silicon", M. J. Hill and P. M. Van Iseghem; Brown, Boveri Research Centre and Semiconductor Development Dept., Switzerland.
Hill et al., IEEE Transactions on Electron Devices, vol. ED-23, No. 8 (Aug. 1976), pp. 809-813.
Platzoder et al., IEEE Transactions on Electron Devices, vol. ED-23, No. 8 (Aug. 1976), pp. 805-808.

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