Method for producing KTIOPO4 single crystal

Details Method for producing KTIOPO4 single crystal Method for producing KTIOPO4 single crystal

1992-07-29

1994-06-21

Chaudhuri, Olik

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth with a subsequent step of heat treating...

156623R, 117 29, 117 36, 117941, C30B 1700

Patent

active

053225880

ABSTRACT:
A method is provided for producing a KTiOPO.sub.4 which is grown at a temperature higher than its Curie temperature using a TSSG method. The grown KTiOPO.sub.4 single crystal is maintained in contact with a melt while the crystal is maintained at a temperature higher than the Curie temperature. A d.c. current is applied in this state across a seed crystal and the melt, while the single crystal is cooled to a temperature lower than the Curie temperature. The value of current density D, defined by the formula D=Ip/(a+b), where Ip is the impressed current and a, b are crystal sizes along a and b axes, respectively, is selected to be 0.01 mA/cm.sup.2 .ltoreq.D.ltoreq.1.0 mA/cm.sup.2. In this manner, the produced KTiOPO.sub.4 is processed into a single domain crystal.

REFERENCES:
patent: 2842467 (1958-07-01), Lundauer et al.
patent: 4087313 (1978-05-01), Milstein
patent: 4231838 (1980-11-01), Gier
patent: 4620897 (1986-11-01), Nakajima
patent: 4746396 (1988-05-01), Marnier
patent: 5084248 (1992-01-01), Takenaka

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