Metal treatment – Compositions – Heat treating
Patent
1981-05-06
1983-03-29
Roy, Upendra
Metal treatment
Compositions
Heat treating
29576B, 29576E, 148175, 148186, 148187, 357 91, 357 61, H01L 21263, H01L 3300
Patent
active
043782558
ABSTRACT:
A multilayer, III-V semiconductive structure can be disordered and shifted up in energy gap into a single crystalline form by a Zinc diffusion. More specifically, all or selected portions of a multilayer of either gallium arsenide/aluminum arsenide or gallium arsenide/aluminum gallium arsenide can be converted into single crystal aluminum gallium arsenide having a higher energy gap than that of the original structure by the process of a Zinc diffusion at low temperature. Other active devices can then be constructed in the higher energy gap material using established semiconductor processing steps.
REFERENCES:
patent: 3485685 (1969-12-01), Casey, Jr. et al.
patent: 3626257 (1971-12-01), Esaki et al.
patent: 3626328 (1971-12-01), Esaki et al.
patent: 3649837 (1972-03-01), Lehovec
patent: 3780358 (1973-12-01), Thompson
patent: 3861969 (1975-01-01), Ono et al.
patent: 3868281 (1975-02-01), Morgan
patent: 3961996 (1976-06-01), Namizaki et al.
patent: 3982207 (1976-09-01), Dingle et al.
patent: 3996492 (1976-12-01), McGroddy
patent: 4001055 (1977-01-01), Charmakadze et al.
patent: 4003632 (1977-01-01), Komiya et al.
patent: 4011113 (1977-03-01), Thompson et al.
patent: 4037241 (1977-07-01), Dierschke
patent: 4063269 (1977-12-01), Hara et al.
patent: 4099999 (1978-07-01), Burnham et al.
patent: 4124826 (1978-11-01), Dixon et al.
patent: 4138274 (1979-02-01), Dyment
patent: 4163238 (1979-07-01), Esaki et al.
patent: 4165474 (1979-08-01), Myers
patent: 4166278 (1979-08-01), Susaki et al.
patent: 4183038 (1980-01-01), Namizaki et al.
patent: 4261771 (1981-04-01), Dingle et al.
Tsukada, T., Jour. Appl. Phys., 45, (1974), 4899-4906.
Holonyak, Jr. Nick
Laidig Wyn D.
Koffsky David N.
Roy Upendra
University of Illinois Foundation
LandOfFree
Method for producing integrated semiconductor light emitter does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for producing integrated semiconductor light emitter, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for producing integrated semiconductor light emitter will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1203083