Method for producing integrated quasi-complementary bipolar tran

Fishing – trapping – and vermin destroying

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

437 59, 437126, 437133, 148DIG9, 148DIG72, H01L 21265

Patent

active

053915046

ABSTRACT:
Generally, and in one form of the invention, an integrated circuit comprising a bipolar transistor and a field effect transistor, wherein a channel of the field effect transistor and a base of the bipolar transistor are formed from a base epitaxial layer 16, and whereby field effect and bipolar transistors are formed within a common material structure is disclosed. In another form of the invention, an integrated circuit comprising a substrate 10, an epitaxial subcollector layer 12, an epitaxial collector layer 14, an epitaxial base layer 16, an epitaxial emitter layer 18, a bipolar transistor formed with an emitter electrical contact 20, 28, 35 to the emitter layer 18, a base contact 34 to the base layer 16, and a collector contact 42 to the subcollector layer 12, and a field effect transistor formed with a first gate contact 20, 30, 39 to the emitter layer 18, a first source contact 36 to the base layer 16, and a first drain contact 37 to the base layer 16, is disclosed.

REFERENCES:
patent: 4981808 (1991-01-01), Hayes
patent: 4996163 (1991-02-01), Sasaki
patent: 5068705 (1991-11-01), Tran
patent: 5077231 (1991-12-01), Plumton et al.
patent: 5213987 (1993-05-01), Bayraktahoglu
patent: 5223449 (1993-06-01), Morris et al.
patent: 5294566 (1994-03-01), Mori

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method for producing integrated quasi-complementary bipolar tran does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for producing integrated quasi-complementary bipolar tran, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for producing integrated quasi-complementary bipolar tran will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1929479

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.