Method for producing improved silicon carbide resistance element

Coating processes – Electrical product produced – Welding electrode

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427 58, 427123, 4272552, 4272554, 4272557, 427249, 427255, 264 61, C23C 1304, C23C 1100

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044264054

ABSTRACT:
Silicon carbide shapes of the general type shown and described in U.S. Pat. No. 4,125,756 are densified and nitrided in such a way as to produce shapes with improved durability and reduction in temperature span in response to voltage changes.

REFERENCES:
patent: 2003592 (1935-06-01), Hediger
patent: 3074887 (1963-01-01), Carrol
patent: 3875477 (1975-04-01), Fredriksson et al.
patent: 3895219 (1975-07-01), Richerson et al.
patent: 4125756 (1978-11-01), Hierholzer, Jr. et al.
patent: 4194028 (1980-03-01), Sirtl et al.
patent: 4205363 (1980-05-01), Boos et al.
patent: 4315968 (1982-02-01), Suplinskas et al.

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