Semiconductor device manufacturing: process – Having selenium or tellurium elemental semiconductor component
Patent
1992-07-21
1999-12-14
Wilczewski, Mary
Semiconductor device manufacturing: process
Having selenium or tellurium elemental semiconductor component
117106, 117956, 438 46, 438 84, 438 95, C30B 2946, C30B 2948, H01L 2106, H01L 2120
Patent
active
060016698
ABSTRACT:
Epitaxial layers of II-VI semiconductor compounds having low incidence of lattice defects such as stacking faults are produced by first depositing a fraction of a monolayer of the cation species of the compound, followed by depositing a thin layer of the compound by migration enhanced epitaxy (MEE). Growth of the remainder of the layer by MBE results in much lower defects than if the entire layer had been grown by MBE. Layers are useful in devices such as LEDs and injection lasers.
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Gaines James Matthew
Petruzzello John
Fox John C.
Philips Electronics North America Corporation
Wilczewski Mary
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