Method for producing hyperabrupt doping profiles in semiconducto

Details Method for producing hyperabrupt doping profiles in semiconducto Method for producing hyperabrupt doping profiles in semiconducto

1984-06-15

1985-12-17

Ozaki, George T.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148175, 29576E, H01L 21365, H01L 21477

Patent

active

045590915

ABSTRACT:
A method for achieving extreme and arbitrary doping profiles in semiconductors with dopant concentrations varying over orders of magnitude in a few atomic layers. The method involves evaporating the semiconductor, along with the desired amounts of n- or p- dopants onto an atomically clean substrate semiconductor surface in an ultrahigh vacuum environment at low temperatures such that an amorphous film results. The amorphous film is then crystallized epitaxially by a solid phase epitaxy, thereby providing a single crystal with the desired dopant profile. Multiple profile changes or grading may be included in the semiconductor film by varying dopant concentrations in the amorphous layer as desired.

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Kunii et al., J. Appl. Phys. 54(5), May 1983, pp. 2847-2849.

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