Method for producing highly pure silicon

Details Method for producing highly pure silicon Method for producing highly pure silicon

1974-02-20

1976-03-02

Weiffenbach, Cameron K.

Coating processes

Electrical product produced

Condenser or capacitor

13 24, 118 4, 118 491, 118 495, 427248, B05D 512

Patent

active

039419002

ABSTRACT:
A method for producing highly pure silicon, or another semiconductor material, includes depositing the element from a corresponding reaction gas at the surface of several rod shaped carrier members composed of highly pure material, the carrier members being connected in series and permeated by a heating current supplied by an operational current source. In heating the serially connected carrier members, the members are first preheated by the application of a high voltage from a three phase supply, the carrier members being subdivided into groups with each group charged by a separate phase of the three phase voltage. Preheating is performed prior to connecting all of the carrier members to the operational supply.

REFERENCES:
patent: 2981605 (1961-04-01), Rummel
patent: 3053638 (1962-09-01), Reiser
patent: 3152933 (1964-10-01), Reuschel
patent: 3171755 (1965-03-01), Reuschel et al.
patent: 3200009 (1965-08-01), Reuschel et al.
patent: 3232792 (1966-02-01), Rummel et al.
patent: 3686475 (1972-08-01), Mikkola

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