Method for producing highly conductive and transparent films of

Coating processes – Electrical product produced – Metallic compound coating

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427109, 427124, 427252, 427253, 4272553, 4272554, 427299, 427314, B05D 512

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051223910

ABSTRACT:
An atmospheric pressure chemical vapor deposition (APCVD) system for doping indium-oxide films with both tin and fluorine to produce dual electron donors in a non-batch process. The APCVD system has a conveyor belt and drive system for continuous processing through one or more reaction chambers separated by nitrogen purge curtains. A substrate passing through the system enters a muffle heated by several heaters and the reaction chambers are supplied by a source chemical delivery system comprising an oxidizer source, a fluorine chemical source, a nitrogen source, rotometers for the above sources, a mass flow controller, a tin chemical bubbler, heated lines, an indium chemical bubbler, a pair of water baths with heaters, and associated valving.

REFERENCES:
Gralenski, N. "Advanced APCVD Reactors for Thin Film Deposition," Microelectronic Mfg. & Testing, Sep./Oct., 1987.
"Thin Films by Conveyorized Atmospheric CVD," presented at the International Society for Hybrid Microelectronics-Internepcon Tech. Sem., Jan. 1983.

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