Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal
Patent
1976-02-13
1977-02-01
Lovell, C.
Metal treatment
Process of modifying or maintaining internal physical...
Chemical-heat removing or burning of metal
29576R, 148186, 156657, 156659, 204 15, 204325, 2041293, 20412965, 357 34, 357 59, 357 88, H01L 2122, H01L 2904, B23P 100
Patent
active
040060454
ABSTRACT:
A high power semiconductor device is formed by providing a semiconductor substrate of N.sup.- conductivity, rendering the backside of same porous as by subjecting same to anodic treatment carried out in a concentrated solution of hydrofluoric acid, converting the porous region to an N.sup.+ region, as by arsenic diffusion and forming an active device by conventional techniques in the top surface of the substrate. The method permits usage of high quality N.sup.- substrates and at the same time eliminates the requirement of growing thick epitaxial layers.
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Lloyd, R. H. F., "Semiconductor Process Control," IBM Tech. Discl. Bull., vol. 11, No. 2, July 1968, p. 143.
Poponiak, et al., "Enhanced Diffusion In Porous Silicon."
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Dockerty, et al., "Protection of Porous Silicon from Oxidation and Impurities."
Aboaf Joseph A.
Broadie Robert W.
Hull Edward M.
Pogge H. Bernhard
International Business Machines - Corporation
Lovell C.
Saba W. G.
Spiegel Joseph L.
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