Method for producing high power semiconductor device using anodi

Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal

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29576R, 148186, 156657, 156659, 204 15, 204325, 2041293, 20412965, 357 34, 357 59, 357 88, H01L 2122, H01L 2904, B23P 100

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040060454

ABSTRACT:
A high power semiconductor device is formed by providing a semiconductor substrate of N.sup.- conductivity, rendering the backside of same porous as by subjecting same to anodic treatment carried out in a concentrated solution of hydrofluoric acid, converting the porous region to an N.sup.+ region, as by arsenic diffusion and forming an active device by conventional techniques in the top surface of the substrate. The method permits usage of high quality N.sup.- substrates and at the same time eliminates the requirement of growing thick epitaxial layers.

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patent: 3640806 (1972-02-01), Watanabe et al.
patent: 3723201 (1973-03-01), Keil
patent: 3919060 (1975-11-01), Pogge et al.
patent: 3929529 (1975-12-01), Poponiak
patent: 3954523 (1976-05-01), Magdo et al.
Lloyd, R. H. F., "Semiconductor Process Control," IBM Tech. Discl. Bull., vol. 11, No. 2, July 1968, p. 143.
Poponiak, et al., "Enhanced Diffusion In Porous Silicon."
Ibid., vol. 17, No. 6, Nov. 1974, pp. 1598-1599, 1602-1603.
Dockerty, et al., "Protection of Porous Silicon from Oxidation and Impurities."

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