Method for producing high efficiency light-emitting diodes and r

Details Method for producing high efficiency light-emitting diodes and r Method for producing high efficiency light-emitting diodes and r

1994-10-07

1997-05-20

Kunemund, Robert

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Substrate dicing

117 95, 438940, H01L 2120

Patent

active

056311907

ABSTRACT:
A method of producing light emitting diodes from silicon carbide with increased external efficiency is disclosed which includes directing a beam of laser light at one surface of a portion of silicon carbide, and in which the laser light is sufficient to vaporize the silicon carbide that it strikes to thereby define a cut in the silicon carbide portion; and then dry etching the silicon carbide portion to remove by-products generated when the laser light cuts the silicon carbide portion. The resulting wafer and diode structure are also disclosed.

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R.J. Tench et al., "Clusters formed in laser-induced ablation of Si, SiC, Pt, UO.sub.2 and evaporation of UO.sub.2 observed by laser ionization time-of-flight mass spectrometry and scanning tunneling microscopy," J. Vac. Sci. Technol. B, vol. 9, No. 2, pt. 2, pp. 820-824, Mar.-Apr. 1991 (abstract only).

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