Method for producing high brightness LED

Details Method for producing high brightness LED Method for producing high brightness LED

2005-11-22

2005-11-22

Lee, Hsien-Ming (Department: 2823)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

C438S023000, C438S024000, C438S025000, C438S029000, C438S030000, C438S046000

Reexamination Certificate

active

06967117

ABSTRACT:
The present invention discloses a method for producing a high brightness LED (light emitting diode). The method primarily comprises steps of: a) providing a temporary substrate for epitaxy; b) forming LED epitaxial layers on said temporary substrate, wherein said LED epitaxial layers with pn junction; c) providing a permanent substrate; d) forming a layered structure between said permanent substrate and said LED epitaxial layers, wherein said layered structure has properties of reflection, adhesion, diffusion barrier and buffer; and e) forming a first electrode and a second electrode on proper position to supply enough energy for said LED epitaxial layers. The LED manufactured in accordance with the present invention can exhibit high brightness and excellent mechanical strength during manufacturing.

REFERENCES:
patent: 2003/0143772 (2003-07-01), Chen

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