Method for producing group III-V compound semiconductor and fabr

Details Method for producing group III-V compound semiconductor and fabr Method for producing group III-V compound semiconductor and fabr

1996-12-23

2000-01-25

Bowers, Charles

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Compound semiconductor

438479, H01L 2120

Patent

active

060177748

ABSTRACT:
The present invention provides a method for producing a group III-V compound semiconductor including nitrogen as a group V element by an organometallic vapor phase growth method. An organometallic as a group III material, an amine type material or ammonia as a group V material and an organic compound which is decomposed by heating so as to generate radicals are used to perform crystal growth.

REFERENCES:
patent: 5650198 (1997-07-01), Denbaars et al.
v. Lakhotia et al., "GaN Film Growth Using Single-Source Precursors", Chem Mater. vol. 7, pp. 546-552, Mar. 1995.
Nakamura et al., "High-power GaN P-N junction blue-light-emitting diodes" Japanese Journal of Applied Physics (1991) 30:L 1998-L 2001.
Matsuoka et al., "Wide-gap semiconductor InGaN and InGaAIN grown by MOVPE" Journal of Electronic Materials (1992) 21:157-163.
Tokuda et al., "MOVPE Growth of GaN using tertiarybutylamine as a nitrogen source" Proceeding of 55th Applied Physics Conference (1994) p. 180. A partial English translation is also included herewith.
Boyd et al., "Organometallic azides as precursors for aluminum nitride thin films" Chemistry of Materials (1989) 1:119-124.
Li et al., "Radical-assisted organometallic vapor-phase epitaxial growth of GaAs" Applied Physics Letters (1991) 59(17):2124-2126.

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