Method for producing group III nitride-based compound...

Details Method for producing group III nitride-based compound... Method for producing group III nitride-based compound...

2008-10-21

2010-11-02

Picardat, Kevin M (Department: 2822)

Semiconductor device manufacturing: process

Repair or restoration

C438S046000, C438S483000, C438S767000, C117S002000, C117S090000

Reexamination Certificate

active

07824929

ABSTRACT:
An object of the present invention is to remove micro-scratches on a surface of a GaN substrate cut from a GaN ingot. The invention is directed to establish a method for surface treatment of a GaN substrate, including heating the surface in an atmosphere containing trimethylgallium, ammonia, and hydrogen. It is preferable that the trimethylgallium feeding rate is 150 μmol/min or higher, the ratio of trimethylgallium feeding rate to ammonia feeding rate (V/III ratio) is 1,200 to 4,000, and the heating temperature is 1,000° C. to 1,250° C. In addition, the temperature of the surface treatment is set to be higher than that of the following GaN growth, and the feed rate of trimethylgallium is lower than that of the growth procedure. RMS of roughness on the substrate was equal to or less than 1.3 nm, and the substrate whose step condition is excellent can be obtained.

REFERENCES:
patent: 5679152 (1997-10-01), Tischler et al.
patent: 6211089 (2001-04-01), Kim et al.
patent: 6488767 (2002-12-01), Xu et al.
patent: 6841274 (2005-01-01), Ueno et al.
patent: 2003/0209185 (2003-11-01), Ueno et al.
patent: 2005/0173715 (2005-08-01), Kyono et al.
patent: 2008/0132044 (2008-06-01), Kyono et al.
patent: 1500919 (A) (2004-06-01), None
patent: 2003-327497 (2003-11-01), None
patent: 2004-273484 (2004-09-01), None
patent: 2005-136311 (2005-05-01), None
Chinese Office Action dated May 11, 2010, with English translation.

Affiliated with

Also associated with

Rating

Method for producing group III nitride-based compound... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for producing group III nitride-based compound..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for producing group III nitride-based compound... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4251330