Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element
Reexamination Certificate
2011-08-23
2011-08-23
Picardat, Kevin M (Department: 2822)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Including integrally formed optical element
C438S028000, C438S032000, C438S038000, C438S042000, C438S046000, C438S456000, C438S458000, C438S459000
Reexamination Certificate
active
08003418
ABSTRACT:
Provided is a method for producing a Group III nitride-based compound semiconductor light-emitting device, wherein a contact electrode is formed on an N-polar surface of an n-type layer through annealing at 350° C. or lower. In the case where, in a Group III nitride-based compound semiconductor device produced by the laser lift-off process, a contact electrode is formed, through annealing at 350° C. or lower, on a micro embossment surface (i.e., a processed N-polar surface) of an n-type layer from vanadium, chromium, tungsten, nickel, platinum, niobium, or iron, when a pseudo-silicon-heavily-doped layer is formed on the micro embossment surface (i.e., N-polar surface) of the n-type layer through treatment with a plasma of a silicon-containing compound gas, and treatment with a fluoride-ion-containing chemical is not carried out, ohmic contact is obtained, and low resistance is attained.
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Kelly, et al., “Optical Patterning of GaN Films”, Appl. Phys. Lett., vol. 69, 1996, pp. 1749-1751.
Goshonoo Koichi
Inazawa Ryohei
Shiraki Tomoharu
Umemura Toshiya
Au Bac H
McGinn IP Law Group PLLC
Picardat Kevin M
Toyoda Gosei Co,., Ltd.
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