Method for producing films of sintered polycrystalline silicon

Details Method for producing films of sintered polycrystalline silicon Method for producing films of sintered polycrystalline silicon

1981-12-29

1983-10-04

Smith, John D.

Coating processes

Electrical product produced

Condenser or capacitor

156603, 264 63, 427 74, H01L 3118

Patent

active

044078587

ABSTRACT:
A low porosity sintered polycrystalline silicon film is produced by grinding initial silicon material in a non-oxygen-containing liquid, such as decahydronaphthalene, to an average grain size corresponding to a specific surface of at least 50 m.sup.2 /g; thickening the so-attained grinding mass with a non-oxygen-containing material, such as polyisobutylene and/or polyethylene in a suitable solvent, so as to attain a viscosity in the resultant slip suitable for drawing a film from such slip, and drawing a film from such slip, optionally dividing the film into desired sized pieces, and sintering the resultant film or pieces.

REFERENCES:
patent: 2904613 (1959-09-01), Paradise
patent: 4173494 (1979-11-01), Kilby
patent: 4330358 (1982-05-01), Grabmaier
Greskovich et al., "Sintering of Covalent Solids", Journal of American Ceramic Society, vol. 59, No. 7-8, pp. 336-343.

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