Method for producing diffused contacted and surface passivated s

Details Method for producing diffused contacted and surface passivated s Method for producing diffused contacted and surface passivated s

1974-06-28

1976-06-29

Tupman, W.

Metal working

Method of mechanical manufacture

Assembling or joining

29580, 29583, 29590, 357 71, B01J 1700

Patent

active

039655679

ABSTRACT:
A method for producing diffused, contacted and surface passivated semiconductor chips for semiconductor devices, wherein after producing a semiconductor wafer with a given arrangement of layers and regions of different conductance and different conductivity types for a plurality of devices by doping with impurity forming elements, both of the major surfaces of the semiconductor wafer are provided with respective metal layers and output electrodes are applied to both of the metal layers for the plurality of devices with the output electrodes being of such a thickness and overlying such areas of the metal layers so that the thickness of the electrodes will still be sufficient for further processing after a subsequent separation of the wafer into the plurality of chips and the major surfaces of the chips after separation, are completely covered by the output electrodes. The semiconductor wafer is then separated into the intended plurality of individual chips which are then provided, if required, with a contour which reduces the field intensity. The individual chips are then etched, measured, and if required repeatedly etched and measured and, if found satisfactory, are provided with a protective layer on the exposed semiconductor surfaces.

REFERENCES:
patent: 2854366 (1958-09-01), Wannlund
patent: 3140527 (1964-07-01), Valdman
patent: 3197839 (1965-08-01), Tiemann
patent: 3288662 (1966-11-01), Weisberg
patent: 3512051 (1970-05-01), Doll
patent: 3523223 (1970-08-01), Luxem

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