Method for producing crystallized silicon as well as...

Details Method for producing crystallized silicon as well as... Method for producing crystallized silicon as well as...

2011-06-07

2011-06-07

Mayes, Melvin C (Department: 1732)

Chemistry of inorganic compounds

Silicon or compound thereof

Elemental silicon

C423S349000, C423S350000, C423S325000, C423S335000, C423S337000, C427S213000, C427S215000, C427S557000, C427S212000, C427S553000, C117S077000, C117S928000, C117S930000, C117S018000, C117S200000

Reexamination Certificate

active

07955582

ABSTRACT:
A method for producing crystallized silicon according to the EFG process by using a shaping part, between which part and a silicon melt, crystallized silicon grows in a growth zone. Inert gas and at least water vapor are fed into the silicon melt and/or growth zone, by means of which the oxygen content of the crystallized silicon is increased. From 50 to 250 ppm of vapor water is added to the inert gas, and the inert gas has an oxygen, CO and/or CO2content of less than 20 ppm total.

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Pivac et al, “Comparative Studies of EFG Poly-Si Grown by Different Procedures”, Solar Energy Materials & Solar Cells 72, 2002, pp. 165-171.
Kalejs, “Point Defect, Carbon and Oxygen Complexing in Polycrystalline Silicon”, Journal of Crystal Growth 128, 1993, pp. 298-303.

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