Fishing – trapping – and vermin destroying
Patent
1994-12-16
1996-08-27
Wilczewski, Mary
Fishing, trapping, and vermin destroying
437101, 437233, 117 8, 148DIG16, H01L 21336, H01L 2120, H01L 21265
Patent
active
055500706
ABSTRACT:
A method for producing a semiconductor film, includes the steps of: (a) forming an amorphous semiconductor film on a substrate having a surface with an insulating property; (b) introducing a material for accelerating crystallization of the amorphous semiconductor film into at least a part of the amorphous semiconductor film; (c) crystallizing the amorphous semiconductor film by heating to obtain a crystalline semiconductor film from the amorphous semiconductor film; and (d) oxidizing a surface of the crystalline semiconductor film to form a semiconductor oxide film containing a part of the material for accelerating the crystallization on the surface of the crystalline semiconductor film.
REFERENCES:
patent: 5112764 (1992-05-01), Mitra et al.
patent: 5147826 (1992-09-01), Liu et al.
patent: 5275851 (1994-01-01), Fonash et al.
patent: 5330935 (1994-07-01), Dobuzinsky et al.
patent: 5403772 (1995-04-01), Zhang et al.
patent: 5426064 (1995-06-01), Zhang et al.
Wolf et al., Silicon Processing for the VLSI Era, vol. 1: Process Technology, Lattice Press 1986, pp. 215-219.
Aizenberg et al., "Low Temperature Oxidation of Si in the Presence of Oxide Catalysts", in Insulating Films on Semiconductors, 1983, pp. 229-233.
Cammarata et al., "NiSi.sub.2 precipitation in nickel-implanted silicon films", Appl. Phys. Lett. vol. 51, No. 14, 5 Oct. 1987, pp. 1106-1108.
Kuznetsov et al, "Silicide precipitate formation and solid phase regrowth of Ni.sup.+ -implanted amorphous silicon", Inst. Phys. Conf. Ser. No. 134: Section 4, Paper presented at Microsc. Semicond. Mater. Conf., Oxford, 5-8 Apr. 1993, pp. 191-194.
Cammarata et al., "Silicide Precipitation and Silicon Crystallization in Nickel implanted amorphous silicon thin films," J. Mater. Research, vol. 5, No. 10, Oct. 1990, pp. 2133-2138.
Hayzelden et al, "Silicide formation and silicide-mediated crystallization of nickel-implanted amorphous silicon thin films," J. Appl. Phys. vol. 73, No. 12, 15 Jun. 1993, pp. 8279-8289.
Dvurechenskii et al., "Transport Phenomena in Amorphous Silicon Doped by Ion Implantation of 3d Metals", Phys. stat. sol. (a) vol. 95, 1986, pp. 635-640.
Kuznetsov et al. "Enhanced Solid Phase Epitaxial Recrustallization of Amorphous silicon due to nickel silicide precipitation resulting from ion implantation and annealing", Nuclear Instruments and Methods in Physics Research. B80/81, 1993, pp. 990-993.
Funai Takashi
Makita Naoki
Morita Tatsuo
Yamamoto Yoshitaka
Sharp Kabushiki Kaisha
Wilczewski Mary
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