Method for producing crystal of fluoride

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth

Reexamination Certificate

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C117S013000, C117S027000

Reexamination Certificate

active

07413606

ABSTRACT:
It is aimed at providing a fluoride crystal growing method capable of controlling a shape of the crystal by a micro-pulling-down method. Fluoride crystals in shapes depending on purposes, respectively, can be grown by adopting carbon, platinum, and iridium as crucible materials adaptable to fluorides, respectively, and by designing shapes of the crucibles taking account of wettabilities of the materials with the fluorides, respectively.

REFERENCES:
patent: 3915656 (1975-10-01), Mlavsky et al.
patent: 4915773 (1990-04-01), Kravetsky et al.
patent: 8-259375 (1996-10-01), None
patent: 10-265293 (1998-10-01), None
T. Fukuda et al., Crystal growth of oxide and fluoride materials for optical, piezoelectric and other applications, Journal of Materials Science, Materials in Electronics, 1999, vol. 10, pp. 571 to 580.

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