Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
Reexamination Certificate
2004-07-20
2008-08-19
Hiteshew, Felisa (Department: 1792)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having pulling during growth
C117S013000, C117S027000
Reexamination Certificate
active
07413606
ABSTRACT:
It is aimed at providing a fluoride crystal growing method capable of controlling a shape of the crystal by a micro-pulling-down method. Fluoride crystals in shapes depending on purposes, respectively, can be grown by adopting carbon, platinum, and iridium as crucible materials adaptable to fluorides, respectively, and by designing shapes of the crucibles taking account of wettabilities of the materials with the fluorides, respectively.
REFERENCES:
patent: 3915656 (1975-10-01), Mlavsky et al.
patent: 4915773 (1990-04-01), Kravetsky et al.
patent: 8-259375 (1996-10-01), None
patent: 10-265293 (1998-10-01), None
T. Fukuda et al., Crystal growth of oxide and fluoride materials for optical, piezoelectric and other applications, Journal of Materials Science, Materials in Electronics, 1999, vol. 10, pp. 571 to 580.
Fukuda Tsuguo
Kikuyama Hirohisa
Satonaga Tomohiko
Fukuda Crystal Laboratory
Hiteshew Felisa
Stella Chemifa Corporation
Young & Thompson
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