Method for producing coplanar multi-level metal/insulator films

Fishing – trapping – and vermin destroying

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

437228, 437238, 437245, 437246, 437195, 156653, H01L 21304, H01L 21306

Patent

active

047896485

ABSTRACT:
Patterned conductive lines are formed simultaneously with stud via connections through an insulation layer to previously formed underlying patterned conductive lines in multilevel VLSI chip technology. A first planarized layer of insulation is deposited over a first level of patterned conductive material to which contacts are to be selectively established. The first layer then is covered by an etch stop material. Contact holes are defined in the etch stop material at locations where stud connectors are required. The first layer of insulation is not etched at this time.
Next, a second planarized layer of insulation, is deposited over the etch stop material. The second layer insulation, in turn, is etched by photolithography down to the etch stop material to define desired wiring channels, some of which will be in alignment with the previously formed contact holes in the etch stop material. In those locations where the contact holes are exposed, the etching is continued into the first layer of insulation to uncover the underlying first level of patterned conductive material.
The channels and via holes are overfilled with metallization. The excess metallization is removed by etching or by chem-mech (chemical-mechanical) polishing.

REFERENCES:
patent: 2933437 (1960-04-01), Loosme
patent: 3911562 (1975-10-01), Youmans
patent: 4305779 (1981-12-01), Steeves et al.
patent: 4366613 (1983-01-01), Ogura et al.
patent: 4475981 (1984-10-01), Rea
patent: 4508815 (1985-04-01), Ackmann et al.
patent: 4526631 (1985-07-01), Silvestri et al.
Ghandhi, S. K., "VLSI Fabrication Principles", 1983, pp. 582-585.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method for producing coplanar multi-level metal/insulator films does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for producing coplanar multi-level metal/insulator films , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for producing coplanar multi-level metal/insulator films will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1494082

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.