Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Liquid phase epitaxial growth
Reexamination Certificate
2005-02-18
2008-10-14
Hiteshew, Felisa C (Department: 1792)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Liquid phase epitaxial growth
C117S072000, C117S204000
Reexamination Certificate
active
07435295
ABSTRACT:
The present invention provides a method for producing a compound single crystal that can improve a growth rate and grow a large single crystal with high crystal uniformity in a short time, and a production apparatus used for the method. The compound single crystal is grown while stirring a material solution to create a flow from a gas-liquid interface in contact with a source gas toward the inside of the material solution. With this stirring, the source gas can be dissolved easily in the material solution, and supersaturation can be achieved in a short time, thus improving the growth rate of the compound single crystal. Moreover, the flow formed by the stirring goes from the gas-liquid interface where a source gas concentration is high to the inside of the material solution where the source gas concentration is low, so that dissolution of the source gas becomes uniform. Accordingly, it is possible not only to suppress nonuniform nucleation at the gas-liquid interface, but also to improve the quality of the compound single crystal produced.
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Kawamura, et al., “Growth of Transparent, Large Size GaN Single Crystal with Low Dislocations using Ca-Na Flux System”, Jpn. J. Appl. Phys., vol. 42.
Kawamura Fumio
Kidoguchi Isao
Kitaoka Yasuo
Minemoto Hisashi
Mori Yusuke
Hamre Schumann Mueller & Larson P.C.
Hiteshew Felisa C
Matsushita Electric - Industrial Co., Ltd.
Mori Yusuke
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