Method for producing compound semiconductor wafer and...

Details Method for producing compound semiconductor wafer and... Method for producing compound semiconductor wafer and...

2007-03-19

2009-08-18

Estrada, Michelle (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257S197000, C257SE29033

Reexamination Certificate

active

07576352

ABSTRACT:
A method for producing a compound semiconductor wafer used for production of HBT by vapor growth of a sub-collector layer, a collector layer, a base layer and an emitter layer in this turn on a compound semiconductor substrate using MOCVD method wherein the base layer is grown as a p-type compound semiconductor thin film layer containing at least one of Ga, Al and In as a Group III element and As as a Group V element under such growth conditions that the growth rate gives a growth determined by a Group V gas flow rate-feed.

REFERENCES:
patent: 6258685 (2001-07-01), Fujita et al.
patent: 6455390 (2002-09-01), Fujita et al.
patent: 2001/0026971 (2001-10-01), Fujita et al.
patent: 2002/0163014 (2002-11-01), Welser et al.
patent: 2003/0222265 (2003-12-01), Nam et al.
patent: 390552 (1990-10-01), None
patent: 977245 (2000-02-01), None
patent: 57-92526 (1982-06-01), None
patent: 3-110829 (1991-05-01), None
patent: 6-236852 (1994-08-01), None
patent: 2001-24212 (2001-01-01), None
Yang et al., J. Appl. Phys., vol. 72, No. 5, pp. 2063-2065 (1992).

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