Fishing – trapping – and vermin destroying
Patent
1989-10-16
1990-05-29
Hearn, Brian E.
Fishing, trapping, and vermin destroying
437247, 437225, 437 22, H01L 21265
Patent
active
049295640
ABSTRACT:
The present invention relates to a method for producing InP single crystals containing impurities such as Fe, Co, Ti, Cr or the like by cutting the single crystals into wafers or blocks and heat-treating the cut wafers or blocks at temperatures ranging from 400.degree. C. to 690.degree. C. Further, the invention is related to a method for producing compound semiconductor devices employing Fe-doped InP single crystals as the substrate of the device. In this method, the InP single crystals are cut into wafers and the cut wafers are heat-treated at temperatures ranging from 400.degree. C. to 690.degree. C. Further, the wafers are implanted with ions and heat-treated at 690.degree. C. or lower to activate the implanted ions. These methods ensure to produce the single crystals and the compound semiconductor devices which have superior electrical properties.
REFERENCES:
patent: 4357180 (1982-11-01), Molnar
patent: 4676840 (1987-06-01), Matsumura
Wilkie et al., "Implantation Damage Control of Silicon in Diffusion During Rapid Thermal Annealing of InP Using AlN/Si.sub.3 N.sub.4 as an Encapsulant".
Kainosho Keiji
Oda Osamu
Shimakura Haruhito
Dang Trung
Hearn Brian E.
Nippon Mining Co., Ltd.
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