Coating apparatus – Gas or vapor deposition – With treating means
Reexamination Certificate
2005-07-19
2005-07-19
Hassanzadeh, Parviz (Department: 1763)
Coating apparatus
Gas or vapor deposition
With treating means
C118S7230HC, C118S7230ER
Reexamination Certificate
active
06918352
ABSTRACT:
A system and a method produce workpieces coated by PECVD with a quality sufficient for epitaxy. Included are a vacuum recipient, a plasma discharge source operationally connected to the vacuum recipient and a workpiece holder within the vacuum recipient, said plasma discharge source generating on said workpiece holder ions with an energy of below 15 eV. The plasma discharge source can be a low-voltage plasma discharge source in which at least one cathode is arranged within a cathode chamber coupled to the vacuum recipient by a diaphragm.
REFERENCES:
patent: 4440108 (1984-04-01), Little et al.
patent: 4443488 (1984-04-01), Little et al.
patent: 4488506 (1984-12-01), Heinecke et al.
patent: 4749587 (1988-06-01), Bergmann et al.
patent: 4989544 (1991-02-01), Yoshikawa
patent: 5009922 (1991-04-01), Harano et al.
patent: 5052339 (1991-10-01), Vakerlis et al.
patent: 5104509 (1992-04-01), Buck et al.
patent: 5384018 (1995-01-01), Ramm et al.
patent: 5554222 (1996-09-01), Nishihara et al.
patent: 5580420 (1996-12-01), Watanabe et al.
patent: 5730808 (1998-03-01), Yang et al.
patent: 5952061 (1999-09-01), Yoshida et al.
patent: 6139964 (2000-10-01), Sathrum et al.
patent: 36 14 384 (1987-01-01), None
patent: 2 219 578 (1989-12-01), None
“Plasma-Enhanced Chemical Vapor Deposition of Epitaxial Silicon From Silane”, S.R. Shanfield, Ext. Abstracts, vol. 83-1, 1983, pp. 230-231, XP002056339, no month.
“Low Temperature Deposition of Microcrystalline Silicon In A Multipolar Plasma”, T.D. Mantei et al. Ext. Abstr., vol. 85, No. 2, 1985, pp. 396-397, XP002056340, no month.
“Plasma-Assisted CVD of Diamond Films By Hollow Cathode ARC Discharge” Diamond and Related Materials, vol., 2, No. 2/04, Mar. 31, 1993, pp. 413-416, XP000360820.
“Silicon from silane through plasma deposition”, S.J. Solomon, Fifteenth IEEE Photovoltaic Specialists Conf.—1981, Kissimmee, FL May 12-15, 1981, pp. 569-571, XP002056341 1981, New York, NY, USA, IEEE.
“Hydrogen plasma chemical cleaning of metallic substrates and silicon wafers”, 22ndInt'l Conf. On Metallurgical Coating and Thin Films, San Francisco, CA Apr. 24-28, 1995, vol. 77 No. 1-3, pp 731-737 XP002056342., ISSN 0257-8972, Surface and Coatings Tech., Dec. 1995, Elsevier, Switzerland.
“Hollow Cathode Plasma Assisted Chemical Vapor Deposition of Diamond”, B. Singh et al., Applied Physics Letters, vol. 52, No. 20, May 16, 1988, pp. 1658-1660, XP000119536, see p. 1658, right-hand column, line 3-p. 1659, right-hand column, line 32.
“Low Temperature Plasma-Enhanced Epitaxy of GaAs”, Journal of the Electrtochemical Society, vol. 131, No. 6, Jun. 1984, pp. 1357-1359, XP002056343, US, see p. 1357, left-hand column, line 32-p. 1358, left-hand column, line 17.
Ramm Jurgen
Rosenblad Carsten
Von Känel Hans
Crowell & Moring LLP
Hassanzadeh Parviz
Unaxis Trading AG
LandOfFree
Method for producing coated workpieces, uses and... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for producing coated workpieces, uses and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for producing coated workpieces, uses and... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3427175