Method for producing CMOS transistor

Details Method for producing CMOS transistor Method for producing CMOS transistor

1993-11-22

1994-11-22

Thomas, Tom

Fishing, trapping, and vermin destroying

437160, 437913, 148DIG34, H01L 2180

Patent

active

053669223

ABSTRACT:
The method of producing a CMOS transistor device. A pair of device regions are formed in separated relation from each other by a field oxide film on a pair of corresponding well regions formed in a semiconductor substrate. A gate insulating film and a gate electrode is sequentially formed on each of the device regions. The gate insulating film is removed through a mask of the patterned gate electrode to expose a silicon active surface at least in one of the device regions. A diborane gas containing P type impurity of boron is applied to the silicon active surface to form thereon a boron absorption film. N type impurity of arsenic is doped into the other device region by ion implantation to form N type of source and drain regions while masking the one device region. The boron is diffused from the adsorption film into the one device region to form P type of source and drain regions by annealing of the substrate.

REFERENCES:
patent: 3506508 (1970-04-01), Nickl
patent: 4242691 (1980-12-01), Kotani et al.
patent: 4381202 (1983-04-01), Mori et al.
patent: 4395433 (1983-07-01), Nagakubo et al.
patent: 4441932 (1984-04-01), Akasaka et al.
patent: 4626450 (1986-12-01), Tani et al.
patent: 4737471 (1988-04-01), Shirato et al.
patent: 4791074 (1988-12-01), Tsunashima et al.
patent: 4855258 (1989-08-01), Allman et al.
patent: 4861729 (1989-08-01), Fuse et al.
patent: 4879255 (1989-11-01), Deguchi et al.
patent: 4891326 (1990-01-01), Koyanagi
patent: 4940505 (1990-07-01), Schachameyer et al.
patent: 4966861 (1990-10-01), Mieno et al.
patent: 4968639 (1990-11-01), Bergonzoni
patent: 4996168 (1991-02-01), Ozaki et al.
"Metal-Oxide-Silicon Field-Effect Transistor Made by Means of Solid-Phase Doping", by Gong et al.; J. Appl. Phys. 65 (11), 1 Jun. 1989.
"Ultrashallow, high doping of boron using molecular layer doping", by Nishizawa; Applied Physics Letters; 5b(1990) 2 Apr., No. 14,
Leung, D. L., et al., "CMOS Devices Fabricated in Thin Epitaxial Silicon on Oxide", 1989 IEEE SOS/SOI Technology conference, Oct., 1989, pp. 74-75.
Simple-structured PMOSFET Fabricated Using Molecular Layer Doping; Nishizawa et al.; Electron Device Letters No. 3, 11 (1990) Mar., pp. 105-106.

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