Method for producing bonding wafer

Details Method for producing bonding wafer Method for producing bonding wafer

2005-04-26

2005-04-26

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

Thinning of semiconductor substrate

C438S977000

Reexamination Certificate

active

06884696

ABSTRACT:
A method for producing a bonded wafer by the ion implantation delamination method includes at least a step of bonding a bond wafer having a micro bubble layer formed by gaseous ion implantation and a base wafer serving as a support substrate and a step of delaminating the bond wafer at the micro bubble layer as a border to form a thin film on the base wafer. After the delamination of the bond wafer, the bonded wafer is subjected to a heat treatment in an atmosphere of an inert gas, hydrogen or a mixed gas thereof, then the bonded wafer is subjected to thermal oxidation to form a thermal oxide film on the surface of the thin film, and then the thermal oxide film is removed to reduce thickness of the thin film.

REFERENCES:
patent: 5920764 (1999-07-01), Hanson et al.
patent: 6103599 (2000-08-01), Henley et al.
patent: 6596610 (2003-07-01), Kuwabara et al.
patent: 05-211128 (1993-08-01), None
patent: 10-074922 (1998-03-01), None
patent: 10-242154 (1998-09-01), None
patent: 10-326790 (1998-12-01), None
patent: 11-354761 (1999-12-01), None
patent: 2000-124092 (2000-04-01), None
patent: 406426 (2000-09-01), None
patent: WO 0128000 (2001-04-01), None

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