Method for producing bonded wafer

Details Method for producing bonded wafer Method for producing bonded wafer

2007-07-04

2011-11-01

Le, Thao (Department: 2818)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

Subsequent separation into plural bodies

C257SE21568

Reexamination Certificate

active

08048769

ABSTRACT:
There is provided a bonded wafer having excellent thickness uniformity after thinning but also good surface roughness and being less in defects.In the production method of a bonded wafer by bonding a wafer for active layer to a wafer for support substrate and thinning the wafer for active layer,oxygen ions are implanted into the wafer for active layer to form an oxygen ion implanted layer in the active layer and thereafter a heat treatment is carried out in a non-oxidizing atmosphere at a temperature of not lower than 1100° C., andan oxide film formed on the exposed surface of the oxygen ion implanted layer is removed and then a heat treatment is carried out in a non-oxidizing atmosphere at a temperature of not higher than 1100° C.

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European Search Report dated Jan. 26, 2011 for corresponding European patent application No. 07768139.3.

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