Method for producing bonded wafer

Details Method for producing bonded wafer Method for producing bonded wafer

2004-09-08

2008-11-04

Lee, Hsien-ming (Department: 2823)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

C438S458000, C257SE21568, C257SE21570

Reexamination Certificate

active

07446016

ABSTRACT:
A bonded SOI substrate having an active layer which is free from crystal defects is obtained by adding more than 9×1018atoms/cm3of boron to a wafer for active layer (10). Since the boron concentration in the wafer for active layer is high, a silicon oxide film is formed at a high rate. Consequently, there can be obtained a Smart-Cut wafer with high throughput. Furthermore, damages to the active layer due to the ion implantation can be reduced, thereby improving the quality of the active layer.

REFERENCES:
patent: 5374564 (1994-12-01), Bruel
patent: 5882987 (1999-03-01), Srikrishnan
patent: 6150239 (2000-11-01), Goesele et al.
patent: 6284628 (2001-09-01), Kuwahara et al.
patent: 2001/0029072 (2001-10-01), Kuwahara et al.
patent: 5-211128 (1993-08-01), None
patent: 2-267195 (1996-05-01), None
patent: 11-121377 (1999-04-01), None
patent: 11-307413 (1999-11-01), None
patent: 2000-49063 (2000-02-01), None
patent: 2003-142668 (2003-05-01), None
patent: 2003-524876 (2003-08-01), None
English Language Abstract of JP 2-267195.
English Language Abstract of JP 2000-49063.
U.S. Appl. No. 10/570,665 to Endo et al., filed on Mar. 6, 2006.
U.S. Appl. No. 10/570,669 to Endo et al., filed on Mar. 6, 2006.
U.S. Appl. No. 10/569,942 to Endo et al., filed on Feb. 28, 3006.
U.S. Appl. No. 10/570,668 to Endo et al., filed on Mar. 6, 2006.
U.S. Appl. No. 10/570,353 to Morimoto et al., filed on Mar. 3, 2006.
U.S. Appl. No. 10/570,354 to Morimoto et al., filed on Mar. 3, 2006.
English Language Abstract of JP 2003-142668.

Affiliated with

Also associated with

Rating

Method for producing bonded wafer does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for producing bonded wafer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for producing bonded wafer will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4026098