Method for producing bonded wafer

Details Method for producing bonded wafer Method for producing bonded wafer

2011-04-19

2011-04-19

Nhu, David (Department: 2895)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

Thinning of semiconductor substrate

C438S311000, C438S474000, C438S009000, C257SE21170, C257SE21320, C257SE21227, C257SE21267

Reexamination Certificate

active

07927972

ABSTRACT:
Even if an oxygen ion implanted layer in a wafer for active layer is not a completely continuous SiO2layer but a layer mixed partially with Si or SiOx, it is removed by here is provided a method for producing a bonded wafer in which it is possible to remove an oxygen ion implanted layer effectively as it is by repetitive treatment with an oxidizing solution and HF solution at a step of removing the oxygen ion implanted layer in a bonded wafer.

REFERENCES:
patent: 5362667 (1994-11-01), Linn et al.
patent: 5517047 (1996-05-01), Linn et al.
patent: 5849627 (1998-12-01), Linn et al.
patent: 6653209 (2003-11-01), Yamagata
patent: 2009/0098707 (2009-04-01), Nishihata et al.
patent: H05-291543 (1993-11-01), None
patent: 2006-184237 (2006-07-01), None

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