Method for producing bonded silicon wafer

Details Method for producing bonded silicon wafer Method for producing bonded silicon wafer

2011-04-19

2011-04-19

Nhu, David (Department: 2895)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

On insulating substrate or layer

C438S510000, C438S513000, C257SE21320, C257SE21077, C257SE21278, C257SE21304, C257SE21311, C257SE21316

Reexamination Certificate

active

07927957

ABSTRACT:
A bonded silicon wafer is produced by a method including an oxygen ion implantation step on a silicon wafer for active layer having the specified wafer face; a step of bonding the silicon wafer for active layer to a silicon wafer for support; a first heat treatment step; an inner SiO2layer exposing step; a step of removing the inner SiO2layer; and a planarizing step of polishing a silicon wafer composite or subjecting the silicon wafer composite to a heat treatment in a reducing atmosphere (a second heat treatment step).

REFERENCES:
patent: 7399681 (2008-07-01), Couillard et al.
patent: 2004/0229444 (2004-11-01), Couillard et al.
patent: 09-116125 (1997-05-01), None
patent: 2000-124092 (2000-04-01), None
patent: 2005074033 (2005-08-01), None

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