Method for producing bit lines for UCP flash memories

Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material

Reexamination Certificate

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C438S257000, C438S296000, C438S593000, C438S211000, C438S201000

Reexamination Certificate

active

07485542

ABSTRACT:
A semiconductor device can be fabricated by forming a floating gate layer over a semiconductor body. The floating gate layer is at least partially arranged over an insulation region in the semiconductor body. The floating gate layer is patterned to expose a portion of the insulation region. A recess is formed in a portion of the insulation region exposed by the patterned floating gate layer. A conductor is deposited within the recess. The conductor serves as a buried bitline. An insulator can then be formed within the recess over the conductor.

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