Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
Reexamination Certificate
2005-07-29
2009-02-03
Toledo, Fernando L (Department: 2895)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Grooved and refilled with deposited dielectric material
C438S257000, C438S296000, C438S593000, C438S211000, C438S201000
Reexamination Certificate
active
07485542
ABSTRACT:
A semiconductor device can be fabricated by forming a floating gate layer over a semiconductor body. The floating gate layer is at least partially arranged over an insulation region in the semiconductor body. The floating gate layer is patterned to expose a portion of the insulation region. A recess is formed in a portion of the insulation region exposed by the patterned floating gate layer. A conductor is deposited within the recess. The conductor serves as a buried bitline. An insulator can then be formed within the recess over the conductor.
REFERENCES:
patent: 4855800 (1989-08-01), Esquivel et al.
patent: 5278438 (1994-01-01), Kim et al.
patent: 5299631 (1994-04-01), Dauvergne
patent: 5570314 (1996-10-01), Gill
patent: 5661057 (1997-08-01), Fujiwara
patent: 6001687 (1999-12-01), Chu et al.
patent: 6214741 (2001-04-01), Lee
patent: 6720610 (2004-04-01), Iguchi et al.
patent: 2001/0018249 (2001-08-01), Tanaka
patent: 2002/0038897 (2002-04-01), Tuan et al.
patent: 2002/0045304 (2002-04-01), Lee
patent: 2002/0167082 (2002-11-01), Weber et al.
patent: 2003/0008457 (2003-01-01), Makimoto
patent: 2004/0111159 (2004-06-01), Pope et al.
patent: WO 01/17022 (2001-03-01), None
Gratz Achim
Polei Veronika
Roehrich Mayk
Infineon - Technologies AG
Lee Jae
Slater & Matsil L.L.P.
Toledo Fernando L
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