Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Compound semiconductor
Reexamination Certificate
2011-07-19
2011-07-19
Toledo, Fernando L (Department: 2895)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Compound semiconductor
C438S041000, C438S606000, C257S103000, C257SE21110
Reexamination Certificate
active
07981712
ABSTRACT:
A method for producing an optoelectronic semiconductor chip based on a nitride semiconductor system is specified. The method comprises the steps of: forming a semiconductor section with at least one p-doped region; and forming a covering layer disposed downstream of the semiconductor section in a growth direction of the semiconductor chip, said covering layer having at least one n-doped semiconductor layer. An activation step suitable for electrically activating the p-doped region is effected before or during the formation of the covering layer. An optoelectronic semiconductor chip which can be produced by the method is additionally specified.
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Ahlstedt Magnus
Höppel Lutz
Peter Matthias
Sabathil Matthias
Strassburg Martin
Cohen Pontani Lieberman & Pavane LLP
Osram Opto Semiconductors GmbH
Toledo Fernando L
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