Method for producing an opto-electronic integrated circuit

Details Method for producing an opto-electronic integrated circuit Method for producing an opto-electronic integrated circuit

1989-02-22

1991-02-26

Hearn, Brian E.

Fishing, trapping, and vermin destroying

148DIG119, 148DIG120, 357 30, 357 56, 372 50, 437 59, 437133, 437904, 437912, H01L 3118

Patent

active

049961632

ABSTRACT:
Present invention is to provide a process for producing an opto-electronic integrated circuit comprising a field effect transistor as an electronic device and a photo-diode as an optical device both formed on an InP substrate,

REFERENCES:
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patent: 4829346 (1989-05-01), Kasahara et al.
Albrecht et al., "Monolithically . . . Indium Phosphide Photodiode Junction Field-Effect Transistor . . . ", IEE Conf. Publ., 292, 14th, Part 2, 1988, pp. 9-12.
Kasahara et al., "Monolithically Integrated . . . Indium Phosphide-MISFET Photoreceiver", Electron. Lett., 20(8), 1984, pp. 314-315.
Sasaki et al., "Monolithic Pin-HEMT Amplifier . . . ", Electron. Lett., (24) 19, 15 Sep. 1988, pp. 1201-1202.

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