Method for producing an InSb thin film element

Details Method for producing an InSb thin film element Method for producing an InSb thin film element

1976-10-26

1978-12-05

Lesmes, George F.

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428213, 428336, 428469, 428215, 427 87, 427376R, 427376E, 427 89, B32B 1520

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041286812

ABSTRACT:
A method for producing an InSb thin film element comprising the steps of (i) preparing a substrate at least one surface of which is made of alumina or an inorganic insulating material containing at least 12 mol % of alumina, and forming an InSb thin film of a thickness of at most 0.2 .mu.m on the surface of said substrate, (ii) depositing on said InSb thin film a film which is made of an inorganic insulating material containing at least 12 mol % of alumina, (iii) heating said InSb thin film above the melting point of InSb, and (iv) cooling said InSb thin film and recrystallizing InSb. The InSb thin film element thus produced has the InSb thin film whose thickness is at most 0.2 .mu.m, whose surface is flat and which has good electrical characteristics.

REFERENCES:
patent: 3082124 (1963-03-01), French et al.
patent: 3287243 (1966-11-01), Ligenza
patent: 3674549 (1972-07-01), Ohshita et al.
patent: 3984263 (1976-10-01), Asao et al.
Billings; J. Vac. Science Tech., vol. 6 (1969), p. 757.

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