Semiconductor device manufacturing: process – Making device array and selectively interconnecting – Using structure alterable to nonconductive state
Reexamination Certificate
2002-05-13
2008-03-04
Graybill, David E (Department: 2822)
Semiconductor device manufacturing: process
Making device array and selectively interconnecting
Using structure alterable to nonconductive state
C438S467000, C438S601000, C438S662000, C438S940000, C257SE21596, C257SE21592, C257SE23150
Reexamination Certificate
active
07338843
ABSTRACT:
A method for producing an electronic component, especially a memory chip, using a laser-induced correction to equalize an integrated circuit by means of at least one laser via in a layer at least partially covering the circuit. The component comprises a rewiring of the contact pads. The inventive method comprises the following steps: each laser via is closed by means of a separate covering layer which is to be applied locally; a rewiring extending between the local covering layers is created; the local covering layers are removed; and the laser-induced correction is carried out by means of the open laser vias.
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KIPO Office Action, Nov. 15, 2005 in Korean Application Ser. No. 9-5-2005-057770030.
Hedler Harry
Irsigler Roland
Vasquez Barbara
Collard & Roe P.C.
Graybill David E
Infineon - Technologies AG
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