Method for producing an electrically conductive element for semi

Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Passivating of surface

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438400, 438404, 438423, H01L 2120

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058973290

ABSTRACT:
A method for producing an electrically conductive element is provided in which an oxidation barrier is formed through modification of one or more layers which initially were receptive to oxidation.

REFERENCES:
patent: 4144101 (1979-03-01), Rideout
patent: 5171703 (1992-12-01), Lin et al.
patent: 5262360 (1993-11-01), Holonyak, Jr. et al.
patent: 5262491 (1993-11-01), Holonyak, Jr. et al.
patent: 5327448 (1994-07-01), Holonyak, Jr. et al.
patent: 5373522 (1994-12-01), Holonyak, Jr. et al.
patent: 5400354 (1995-03-01), Ludowise et al.
patent: 5403775 (1995-04-01), Holonyak, Jr. et al.
patent: 5493577 (1996-02-01), Choquette et al.
patent: 5557627 (1996-09-01), Schneider, Jr. et al.
patent: 5581571 (1996-12-01), Holonyak, Jr. et al.
Babic et al., "Room-Temperature Continuous-Wave Operation of 1.54-mm Vertical-Cavity Lasers," IEEE Photonics Technology Letters, vol. 7, pp. 1225-1227 (Nov. 1995).
Blum et al., "Electrical and Optical Characteristics of AlAsSb/GaAsSb Distributed Bragg Reflectors for Surface Emitting Lasers," Applied Physics Letters, vol. 67, pp. 3233-3235 (Nov. 1995).
Caracci et al., "High-Performance Planar Native-Oxide Buried-Mesa Index-Guided A1GaAs-GaAs Quantum Well Heterostructure Lasers," Applied Physics Letters, vol. 61, pp. 321-323 (Jul. 20, 1992).
Choquette et al., "Low Threshold Voltage Vertical-Cavity Lasers Fabricated by Selective Oxidation," Electronics Letters, vol. 30, pp. 2043-2044 (Nov. 1994).
Choquette et al., "Cavity Characteristics of Selectively Oxidized Vertical-Cavity Lasers," Applied Physics Letters, vol. 66, pp. 3413-3415 (Jun. 1995).
Choquette et al., "Fabrication and Performance of Selectively Oxidized Vertical-Cavity Lasers," IEEE Photonics Technology Letters, vol. 7, pp. 1237-1239 (Nov. 1995).
Cibert et al. "Kinetics of Implantation Enhanced Interdiffusion of Ga and A1 at GaAs-Ga.sub.x A1.sub.1-x As Interfaces," Applied Physics Letters, vol. 49, pp. 223-225 (Jul. 28, 1986).
Dallesasse et al., "Hydrolyzation Oxidation of Al.sub.x Ga.sub.1-x As-AlAs-GaAs Quantum Well Heterostructures and Superlattices," Applied Physics Letters, vol. 57, pp. 2844-2846 (Dec. 1990).
Dallesasse et al., "Native-Oxide Masked Inpurity-Induced Layer Disordering of Al.sub.x Ga.sub.1-x As Quantum Well Heterostructures," Applied Physics Letters, vol. 58, pp. 974-976 (Mar. 4, 1991).
Dallesasse et al., "Native-Oxide Stripe-Geometery Al.sub.x Ga.sub.1-x As-GaAs Quantum Well Heterostructure Lasers," Applied Physics Letters, vol. 58, pp. 394-396 (Jan. 28, 1991).
Dallesasse et al., "Native-Oxide-Defined Coupled-Stripe Al.sub.x Ga.sub.1-x As-GaAs Quantum Well Heterostructure Lasers," Applied Physics Letters, vol. 58, pp. 834-836 (Feb. 25, 1991).
Dallesasse et al., "Hydrolyzation Oxidation of Al.sub.x Ga.sub.1-x As-AlAs-GaAs Quantum Well Heterostructure Lasers," Applied Physics Letters, vol. 58, pp. 834-836 (Feb. 25, 1991).
Evans et al., "Edge-Emitting Quantum Well Heterostructure Laser Diodes with Auxillary Native-Oxide Vertical Confinement," Applied Physics Letters, vol. 67, pp. 3168-3170 (Nov. 1995).
Jewell et al., "Surface-Emitting Lasers Break the Resistance Barrier," Photonics Spectra, vol. 27, pp. 126-130 (1992) (No Month).
Kish et al. "Native-Oxide Stripe-Geometry In.sub.0.5 (A.sub.x lGa.sub.1-x).sub.0.5 P Heterostructure Laser Diodes," Applied Physics Letters, vol. 59, pp. 354-356 (Jul. 15, 1991).
Kish et al., "Low-Threshold Disorder-Defined Native-Oxide Delineated Buried-Heterostructure Al.sub.x Ga.sub.1-x As-GaAs Quantum Well Lasers," Applied Physics Letters, vol. 58, pp. 1765-1767 (Apr. 22, 1991).
Kish et al., "Dependence on Doping Type (p
) of the Water Vapor Oxidation of High-Gap Al.sub.x Ga.sub.1-x As," Applied Physics Letters, vol. 60, pp. 3165-3167 (Jun. 22, 1992).
Koyama et al., "Wavelength Control of Vertical Cavity Surface-Emitting Lasers by Using Nonplanar MOCVD," IEEE Photonics Technology Letters, vol. 7, pp. 10-12 (Jan. 1995).
Krames et al., "Deep-Oxide Planar Buried-Heterostructure A1GaAs-GaAs Quantum Well Heterostructure Laser Diodes," Applied Physics Letters, vol. 65, pp. 3221-3223 (Dec. 19, 1994).
Krames et al., "Buried-Oxide Rigid-Waveguide InAIAs-InGaAsP (.lambda. .about. 1.3 .mu.m) Quantum Well Heterostructure Laser Diodes," Applied Physics Letters, vol. 64, pp. 2821-2823 (May 23, 1994).
Maranowski et al., "A1.sub.x Ga.sub.1-x As-GaAs-In.sub.y Ga.sub.1-y As Quantum Well Heterostructure Lasers with Native Oxide Current-Blocking Windows Formed on Metallized Devices," Applied Physics Letters, vol. 64, pp. 2151-2153 (Apr. 18, 1994).
Maranowski et al., "Native Oxide Top- and Bottom-Confined Narrow Stripe p-n Al.sub.y Ga.sub.1-y As-GaAs-In.sub.x Ga.sub.1-x As Quantum Well Heterostructure Laser," Applied Physics Letters, vol. 63, pp. 1660-1662 (Sep. 20, 1993).
Ries et al., "Photopumped Room-Temperature Edge- and Vertical-Cavity Operation of AlGaAs-GaAs-InGaAs Quantum Well Heterostructure Lasers Utilizing Native Oxide Mirrors," Applied Physics Letters, vol. 65, pp. 740-742 (Aug. 8, 1994).
Sugg et al., "Native Oxide-Embedded A1.sub.y Ga.sub.1-y As-GaAs-In.sub.x Ga.sub.1-x As Quantum Well Heterostructure Laser," Applied Physics Letters, vol. 62,m pp. 1259-1261 (Mar. 15, 1993).

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