Method for producing an electrical thin layer circuit

Details Method for producing an electrical thin layer circuit Method for producing an electrical thin layer circuit

1979-03-12

1980-04-29

Tufariello, T. M.

Chemistry: electrical and wave energy

Processes and products

29620, 29847, 1566611, 204 38A, 361402, C25D 1102, C25D 1134, H01C 1706, H05K 300

Patent

active

042005027

ABSTRACT:
A method is disclosed for producing an electric thin layer circuit comprising at least one capacitor and a conductor path and/or a resistor. The number of masks required for the production of such a thin layer circuit is reduced. First and second layers of tantalum-aluminum alloy where the second layer has a tantalum share lower than the first, are applied on an insulating base. In a first masking and etching technique, areas of the first and second layers are etched off outside the circuit elements. At least the second layer is anodically oxidized and the anodically oxidized surface is covered with a silicon dioxide layer so as to form a two layer dielectric for the capacitor. In a second masking and etching technique, not-required areas of the silicon dioxide layer external to the capacitor are removed. By utilizing the silicon dioxide layer remaining as an etching mask, the not-required areas of the tantalum-aluminum oxide layer and the second tantalum-aluminum layer external to the capacitor are removed. In a third etching and masking technique, a conductive surface layer is applied over the silicon dioxide layer at the capacitor element to form a two-layer dielectric capacitor and over the first tantalum-aluminum layer to form the conductor path.

REFERENCES:
patent: 3386011 (1968-05-01), Murray, Jr.
patent: 3607679 (1971-09-01), Melroy
patent: 3718565 (1973-02-01), Pelletier
patent: 3949275 (1976-04-01), Muenz

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