Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – Including passive device
Reexamination Certificate
2006-07-18
2006-07-18
Thai, Luan (Department: 2891)
Semiconductor device manufacturing: process
Forming bipolar transistor by formation or alteration of...
Including passive device
C257S528000, C257S531000
Reexamination Certificate
active
07078304
ABSTRACT:
An electrical circuit is formed by forming and patterning a conductive layer on a substrate, forming and patterning a conductive layer on another substrate, depositing a dielectric layer on at least a portion of one of conductive layers, mounting an integrated circuit (IC) between the substrates, coupling the IC to the conductive layers, and affixing the substrates together with the conductive layers between the substrates. These are either separate substrates or a unitary substrate. The IC is mounted either to a substrate, a conductive layer, or a dielectric layer. The IC is coupled to the conductive layers either directly or through openings formed in the dielectric layer. An interior conductive layer may be used to couple the IC to the conductive layers.
REFERENCES:
patent: 4369557 (1983-01-01), Vandebult
patent: 5972156 (1999-10-01), Brady et al.
patent: 5973598 (1999-10-01), Beigel
patent: 6025725 (2000-02-01), Gershenfeld et al.
patent: 6486544 (2002-11-01), Hashimoto
Derbenwick Gary F.
DeVilbiss Alan D.
Celis Semiconductor Corporation
Hanes & Schutz, LLC
Pannell Mark G.
Thai Luan
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