Fishing – trapping – and vermin destroying
Patent
1993-11-18
1995-12-12
Wilczewski, Mary
Fishing, trapping, and vermin destroying
437 44, 437981, H01L 21336
Patent
active
054749417
ABSTRACT:
A method for producing an active matrix substrate using a thin film transistor having a gate electrode on an insulating substrate covered with a gate insulating layer, a semiconductor layer on the gate insulating layer, a channel protective layer on the semiconductor layer, a drain electrode having a portion overlying the gate electrode with the interposition of the gate insulating layer, the semiconductor layer and the channel protective layer, and a source electrode having a portion overlying the gate electrode with the interposition of the gate insulating layer, the method enhancing the transistor characteristics of the active matrix substrate with minimum leakage and the removal of an off-current generated from the presence of electrons and holes.
REFERENCES:
patent: 4319395 (1982-03-01), Lund et al.
patent: 4394182 (1983-07-01), Maddox, III
patent: 4599246 (1986-08-01), Harajiri et al.
patent: 5292675 (1994-03-01), Codama
Wolf, Silicon Processing for the VLSI Era, vol. 2--Process Integration, Lattice Press, 1990, pp. 66-67.
"Leakage Current of Amorphous Silicon Thin-Film-Transistor (TFT)" by Wu et al, Electronics Research and Service Organization, Industrial Technology Research Institute, Chutung, Hsinchu, Taiway, R.O.C., pp. 513-517.
Mitani Yasuhiro
Morimoto Hirosshi
Tanaka Hirohisa
Yamamoto Tomohiko
Sharp Kabushiki Kaisha
Wilczewski Mary
LandOfFree
Method for producing an active matrix substrate does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for producing an active matrix substrate, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for producing an active matrix substrate will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1359400