Method for producing an active matrix substrate

Details Method for producing an active matrix substrate Method for producing an active matrix substrate

1991-12-26

1994-02-15

Wilczewski, Mary

Fishing, trapping, and vermin destroying

437 40, 437101, 437909, H01L 21336, H01L 2184

Patent

active

052866599

ABSTRACT:
A method for producing an active matrix substrate using a thin film transistor having a gate electrode on an insulating substrate covered with a gate insulating layer, a semiconductor layer on the gate insulating layer, a channel protective layer on the semiconductor layer, a drain electrode having a portion overlying the gate electrode with the interposition of the gate insulating layer, the semiconductor layer and the channel protective layer, and a source electrode having a portion overlying the gate electrode with the interposition of the gate insulating layer, the method enhancing the transistor characteristics of the active matrix substrate with minimum leakage and the removal of an off-current generated from the presence of electrons and holes.

REFERENCES:
patent: 4599246 (1986-07-01), Harajiri et al.
patent: 5010027 (1991-04-01), Possin et al.
patent: 5071779 (1991-12-01), Tanaka et al.
patent: 5114869 (1992-05-01), Tanaka et al.
Bare et al., "Ion Implanted Contacts to .alpha.-Si:H Thin Film Transistors", IEEE Electron Device Letters, vol. EDL-7, No. 7, Jul. 1986, pp. 431-433.
"Leakage Current of Amorphous Silicon Thin-Film-Transistor (TFT)" by Wu et al, Electronics Research and Service Organization, Industrial Technology Research Institute, Chutung, Hsinchu, Taiwan, R.O.C., pp. 513-517 (date unknown).

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