Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Havin growth from molten state
Reexamination Certificate
2007-03-06
2008-11-11
Hiteshew, Felisa C (Department: 1792)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Havin growth from molten state
C117S083000, C117S085000
Reexamination Certificate
active
07449064
ABSTRACT:
An AlN single crystal is grown by pressurizing a melt including at least gallium, aluminum and sodium in an atmosphere containing nitrogen. Preferably, the AlN single crystal is grown under a nitrogen partial pressure of 50 atms or lower and at a temperature in a range of 850° C. to 1200° C.
REFERENCES:
patent: 2000-327495 (2000-11-01), None
patent: 2003-119099 (2003-04-01), None
patent: 2003-335600 (2003-11-01), None
K. Yasui et al., “Growth of AlxGa1-xN and InyGa1-yN Single Crystals Using the Na Flux Method,”Phys. Stat. Sol., 2001, vol. 188, No. 1, pp. 415 to 419.
M. Yano et al., “Growth of Nitride Crystals, BN, AlN and GaN by Using a Na Flux,” Diamond ad Related Materials, 2000, vol. 9, pp. 512-515.
Hisanori Yamane et al., “Natrium o Mochiita AlN no Teion Gosei,” The Ceramic Society of Japan Shunki Symposium Koen Yokoshu, 1998, vol. 11, p. 157.
Cortland O. Dugger, “The Synthesis of Aluminum Nitride Single Crystals,” Mat. Res. Bull. vol. 9, pp. 331-336, 1974.
Imai Katsuhiro
Iwai Makoto
Burr & Brown
Hiteshew Felisa C
NGK Insulators Ltd.
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