Method for producing a waveguide structure in a...

Coherent light generators – Particular active media – Semiconductor

Reexamination Certificate

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C372S045010, C372S046010, C372S045012, C372S046011

Reexamination Certificate

active

07376163

ABSTRACT:
Methods for producing surface-emitting semi-conductor lasers with tunable waveguiding are disclosed. The laser comprises an active zone containing a pn-transition, surrounded by a first n-doped semiconductor layer and at least one p-doped semiconductor layer. In addition to a tunnel junction on the p-side of the active zone, the tunnel junction borders a second n-doped semi-conductor layer with the exception of an area forming an aperture. An n-doped layer is provided between the layer provided for the tunnel junction and the at least one p-doped semiconductor layer. The tunnel junction may be arranged in a maximum or minimum of the vertical intensity distribution of the electric field strength. This enables surface-emitting laser diodes to be produced in high yields with stabilization of the lateral single-mode operation, high performance and wave guiding properties.

REFERENCES:
patent: 5311534 (1994-05-01), Mori et al.
patent: 5625637 (1997-04-01), Mori et al.
patent: 5805624 (1998-09-01), Yang et al.
patent: 6052398 (2000-04-01), Brillouet et al.
patent: 6687281 (2004-02-01), Coldren et al.
patent: 6771680 (2004-08-01), Bour et al.
patent: 2001/0050934 (2001-12-01), Klem et al.
J. Boucart et al., “1-mW CW-RT Monolithic VCSEL at 1.55 .mu.m,” IEEE Photonics Technology Letters, vol. 11, pp. 629-631 (1999).
K.D. Choquette, et al., “Room Temperature Continuous Wave InGaAsN Quantum Well Vertical-Cavity Lasers Emitting At 1.3 Microm,” Electronics Letters, IEE Stevenage, GB, vol. 36, No. 16, Aug. 3, 2000.
S. Sekiguchi, et al. “Selectively Formed ALAS/INP current confining Tunnel Junction For Gainasp/INP Surface Emitting Lasers” 11th International Conference on Indium Posphide And Related Materials, Conference Proceedings, IPRM Davos, New York, NY, May 16-20, 1999.
International Preliminary Examination Report dated May 2, 2005 issued in related PCT application PCT/EP2003/012968.

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