Method for producing a vertically emitting laser

Details Method for producing a vertically emitting laser Method for producing a vertically emitting laser

2006-04-25

2006-04-25

Sarkar, Asok Kumar (Department: 2891)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Mesa formation

C372S046012

Reexamination Certificate

active

07033853

ABSTRACT:
The invention is directed to a vertically emitting laser and a method of manufacturing such a laser having a current aperture and a semiconductor relief. The semiconductor relief and the current aperture are defined in the same processing operation, thereby causing the semiconductor relief and the current aperture to be substantially self-aligned with respect to one another. In addition, such processing results in an area ratio of the semiconductor relief and the current aperture to be substantially self-scaling with respect to processing variations.

REFERENCES:
patent: 2003/0235226 (2003-12-01), Ueki
“Transverse Mode Selection in Large-Area Oxide-Confined Vertical-Cavity Surface-Emitting Lasers Using a Shallow Surface Relief”, H. Martinsson, J.A. Vukusic, M. Grabherr, M. Michalzik, R. Jäger, K.J. Ebeling, and A. Larsson, IEEE Photonics Technology Letter, vol. 11, No. 12, Dec. 1999, pp. 1536-1538.
“Increased-area oxidized single-fundamental mode VCSEL with self-aligned shallow etched surface relief”, H.J. Unold, M. Grabherr, F. Eberhard, F. Mederer, R. Jäger, M. Riedl, and K.J. Ebeling, Electronics Letters, Aug. 5th1999, vol. 35, No. 16, pp. 1340-1341.

Affiliated with

Also associated with

Rating

Method for producing a vertically emitting laser does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for producing a vertically emitting laser, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for producing a vertically emitting laser will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3530648