Method for producing a vertical channel transistor

Details Method for producing a vertical channel transistor Method for producing a vertical channel transistor

1982-07-12

1984-05-22

Hearn, Brian E.

Metal working

Method of mechanical manufacture

Assembling or joining

29580, 29584, 29591, 156628, 204192E, 357 23, H01L 2120, H01L 21285, H01L 21302

Patent

active

044492855

ABSTRACT:
A steep-walled mesa is defined by ion beam, plasma or orientation dependent etch, and has a thick insulating layer over its uppermost surface. The material of the mesa is undercut to leave the insulating layer overhanging. Further insulating material is then formed thinly over the exposed mesa material and conductive material deposited giving good coverage of the insulated side-walls of the mesa. Excess conductive material is removed by ion-beam milling, leaving a conductive material gate in the shadow of the cap-like insulating layer.
The orientation dependent etchant diazine catalyzed ethylene diaminepyrocatachol-water solution is used to form {111} crystal plane steep side-walled mesa from (110) surface oriented silicon, and aluminium metal conductive material deposited by chemical vapor deposition.

REFERENCES:
patent: 3851379 (1974-12-01), Gutnecht et al.
Oakes, J. G., et al., "A Power Silicon Microwave MOS Transistor", in IEEE Transactions on Microwave Theory and Techniques, vol. MTT-24, No. 6, Jun. 1976, pp. 305-311.

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