Method for producing a transparent conductive ZnO film by incorp

Details Method for producing a transparent conductive ZnO film by incorp Method for producing a transparent conductive ZnO film by incorp

1995-04-04

1996-08-13

Pianalto, Bernard

Coating processes

Direct application of electrical, magnetic, wave, or...

Photoinitiated chemical vapor deposition

4271263, 4272553, 427294, 427314, 427558, C23C 1648

Patent

active

055454437

ABSTRACT:
The formation of a transparent conductive ZnO film on a substrate in accordance with the chemical vapor deposition process is accomplished herein by a method characterized by feeding purified water and an organic metal material for Zn as separately entrained by a carrier gas into a vacuum chamber having a reduced inner pressure, adjusting the gas pressure inside the vacuum chamber to a level in the range of from 1 to 30 Torrs, supplying diborane gas or a compound containing boron or aluminum into the vacuum chamber, heating a substrate disposed inside the chamber to a prescribed temperature, and performing the ensuant formation of a film under the adjusted gas pressure mentioned above. Preferably, the formation of the film on the substrate disposed inside the vacuum chamber is carried out while the substrate is kept irradiated with ultraviolet light. This method enables the transparent conductive ZnO film possessing a textured surface form, exhibiting low resistivity, and particularly befitting adoption as a transparent conductive film in a thin-film solar cell to be produced at a relatively high film-forming rate.

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Morosanu, C. E., Thin Films by Chemical Vapour Deposition; Elsevier, 1990, pp. 51-52 (No month included).

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