Method for producing a thyristor

Details Method for producing a thyristor Method for producing a thyristor

2005-08-02

2005-08-02

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Making regenerative-type switching device

C438S138000, C438S139000

Reexamination Certificate

active

06924177

ABSTRACT:
A thyristor having a first zone, a second zone, a third zone, and a fourth zone. At least one control electrode is connected to the second and/or third zone. In order to reduce the static and dynamic power loss in a symmetrical thyristor, it is proposed that a field stop zone of the second conductivity type be disposed approximately in the center of the second zone, with the result that it subdivides the second zone into two sections of essentially the same size. To that end, the field stop layer is produced on an inner surface of a first wafer or of a second wafer, and the first wafer is connected to the second wafer, such that the two inner surfaces of the two wafers lie one on top of the other.

REFERENCES:
patent: 3538401 (1970-11-01), Chu
patent: 3855611 (1974-12-01), Neilson et al.
patent: 4980742 (1990-12-01), Stengl et al.
patent: 4985741 (1991-01-01), Bauer et al.
patent: 5068704 (1991-11-01), Nakagawa et al.
patent: 5459338 (1995-10-01), Takayanagi et al.
patent: 5506153 (1996-04-01), Brunner et al.
patent: 5629535 (1997-05-01), Ajit
patent: 5844259 (1998-12-01), Kinzer et al.
patent: 6194290 (2001-02-01), Kub et al.
patent: 6274892 (2001-08-01), Kub et al.
patent: 6309920 (2001-10-01), Laska et al.
patent: 6404037 (2002-06-01), Finney
patent: 6489187 (2002-12-01), Schulze et al.
patent: 6514824 (2003-02-01), Randazzo et al.
patent: 6555849 (2003-04-01), Schuh et al.
patent: 6630711 (2003-10-01), Huang
patent: 6647041 (2003-11-01), Verma et al.
patent: 6703684 (2004-03-01), Udrea et al.
patent: 1 917 013 (1969-10-01), None
patent: 197 31 495 (1999-01-01), None
patent: 0 158 186 (1985-10-01), None
patent: 0 344 514 (1989-12-01), None
patent: 0 387 721 (1990-09-01), None
patent: 0 405 200 (1991-01-01), None
patent: 0 556 739 (1993-08-01), None
patent: 62-290179 (1987-12-01), None
patent: 08-032049 (1996-02-01), None

Affiliated with

Also associated with

Rating

Method for producing a thyristor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for producing a thyristor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for producing a thyristor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3520430