Fishing – trapping – and vermin destroying
Patent
1995-03-29
1996-10-22
Quach, T. N.
Fishing, trapping, and vermin destroying
437 24, 437 41, 437162, 437937, H01L 21786
Patent
active
055676332
ABSTRACT:
A polycrystalline silicon film formed of an active layer of a thin film transistor is entirely hydrogenated by a low-temperature process, thereby lowering the resistance and relaxing the electric field in the vicinity of the drain to reduce the leakage current. A gate and an insulating film that covers it are formed on a substrate having an insulating surface. A hydrogenated polycrystalline silicon film is formed over the substrate, including the gate, with the insulating film interposed therebetween. A silicon oxide film pattern is formed on the polycrystalline silicon film directly above the gate. Source/drain regions are formed on the polycrystalline silicon film substantially at two external sides of the silicon oxide film pattern. The source/drain regions are formed from a hydrogen-containing amorphous silicon film, a conductive silicon film and a metal film, which are successively stacked on the polycrystalline silicon film. Accordingly, the hydrogen-containing amorphous silicon film functions as an offset region.
REFERENCES:
patent: 5075237 (1991-12-01), Wu
patent: 5395804 (1995-03-01), Ueda
patent: 5401685 (1995-03-01), Ha
patent: 5403756 (1995-04-01), Yoshinouchi et al.
Gosain Dharam P.
Usui Setsuo
Westwater Jonathan
Quach T. N.
Sony Corporation
Trinh Michael
LandOfFree
Method for producing a thin film transistor having improved carr does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for producing a thin film transistor having improved carr, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for producing a thin film transistor having improved carr will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2358279