Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Warping of semiconductor substrate
Reexamination Certificate
2005-09-20
2005-09-20
Coleman, W. David (Department: 2823)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
Warping of semiconductor substrate
Reexamination Certificate
active
06946365
ABSTRACT:
A method for making a thin layer from a structure. A stacked structure is made of a first part designed to facilitate the introduction of gaseous species and of a second part, the second part having a first free face and a second face integral with the first part. A gaseous species is introduced into the structure, from the first part, to create an embrittled zone, a thin layer being thus delimited between the first face of the second part and the embrittled zone. The thin layer is separated from the remaining of the structure at the level of the embrittled zone.
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“Sol Interposer structure” IBM Technical Disclosure Bulletin, IBM Corp., vol. 39, No. 7, pp. 191-195 Jul. 1, 1996.
Aspar Bernard
Bruel Michel
Coleman W. David
Commissariat a l''Energie Atomique
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
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